Those heterodimensional structures overcome the limitations of homogeneous nanowires and show great potential in high-performance nano-optoelectronic devices. In this review, we summarize and discuss recent advances in fabrication, properties and applications of nanowire. Semiconductor nanowires are considered as one of the most promising candidates for next-generation devices due to their unique quasi-one-dimensional structures and novel physical properties. In recent years, advanced heterostructures have been developed by combining nanowires with low-dimensional. Here, we demonstrate how tunneling-induced layer hybridization can lead to the emergence of two distinct classes of Feshbach resonances in atomically thin semiconductors. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from.
